@article{Okhrimenko2024274,
  title = {Redistribution of radiative recombination centers in the SiC/por-SiC/Dy2O3 structure under the influence of athermal microwave irradiation},
  author = {O.B. Okhrimenko and Yu.Yu. Bacherikov and O.F. Kolomys and D.M. Maziar and V.V. Strelchuk and V.K. Lytvyn and R.V. Konakova},
  journal = {Semiconductor Physics, Quantum Electronics & Optoelectronics},
  year = {2024},
  volume = {27},
  number = {3},
  pages = {274-279},
  doi = {10.15407/spqeo27.03.274},
  keywords = {athermal microwave action, rare-earth oxides, photoluminescence, silicon carbide},
  abstract = {In this work, the authors have considered the effect of short-term nonthermal action of microwave radiation on the distribution of radiative recombination centers in SiC/por-SiC/Dy2O3 structures. The analysis of photoluminescence spectra of these structures excited by the radiation with an energy lower than the band gap in the 4H-SiC crystalline substrate has shown that the short-term action of microwave radiation leads to the migration of dislocations and, as a consequence, to redistribution of radiative recombination centers and local symmetry change.},
}