TY  - JOUR
AU  - O.B. Okhrimenko
AU  - Yu.Yu. Bacherikov
AU  - O.F. Kolomys
AU  - D.M. Maziar
AU  - V.V. Strelchuk
AU  - V.K. Lytvyn
AU  - R.V. Konakova
TI  - Redistribution of radiative recombination centers in the SiC/por-SiC/Dy2O3 structure under the influence of athermal microwave irradiation
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 27
IS  - 3
SP  - 274
EP  - 279
PY  - 2024
DO  - 10.15407/spqeo27.03.274
UR  - https://doi.org/10.15407/spqeo27.03.274
AB  - In this work, the authors have considered the effect of short-term nonthermal action of microwave radiation on the distribution of radiative recombination centers in SiC/por-SiC/Dy2O3 structures. The analysis of photoluminescence spectra of these structures excited by the radiation with an energy lower than the band gap in the 4H-SiC crystalline substrate has shown that the short-term action of microwave radiation leads to the migration of dislocations and, as a consequence, to redistribution of radiative recombination centers and local symmetry change.
KW  - athermal microwave action
KW  - rare-earth oxides
KW  - photoluminescence
KW  - silicon carbide
ER  -