TY  - JOUR
AU  - B.K. Ismaylov
AU  - N.F. Zikrillayev
AU  - K.A. Ismailov
AU  - Z.T. Kenzhaev
TI  - Physical mechanism of gettering of impurity Ni atom clusters in Si lattice
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 27
IS  - 3
SP  - 294
EP  - 297
PY  - 2024
DO  - 10.15407/spqeo27.03.294
UR  - https://doi.org/10.15407/spqeo27.03.294
AB  - This article presents the gettering mechanism and the physical model of impurity Ni atom clusters in the Si crystal lattice. The study finds out that the formed Ni atom clusters lead to gettering various rapidly diffusing impurities, both present in the Si lattice and introduced, as well as oxygen atoms, by stimulating generation of recombination centers of thermal and radiation defects.
KW  - silicon
KW  - cluster
KW  - gettering
KW  - nickel
KW  - thermal donors
KW  - lattice
KW  - physical mechanism
KW  - impurity
ER  -