@article{Parchinskiy2024302,
  title = {Anisotropic magnetoresistance of GaMnAs:Be},
  author = {P.B. Parchinskiy and A.S. Gazizulina and A.A. Nasirov and Sh.U. Yuldashev},
  journal = {Semiconductor Physics, Quantum Electronics & Optoelectronics},
  year = {2024},
  volume = {27},
  number = {3},
  pages = {302-307},
  doi = {10.15407/spqeo27.03.302},
  keywords = {GaMnAs, epitaxial layers, molecular beam epitaxy, anisotropic magnetoresistance, magnetic anisotropy, easy axis},
  abstract = {The effect of co-doping with Be on the magnetic anisotropy in Ga0.972Mn0.028As epitaxial layers has been studied by magnetoresistance measurements. Co-doping with Be has been shown to lead to reorientation of both easy and hard magnetic axes in GaMnAs. Measurements of the temperature dependence of the anisotropic magnetoresistance demonstrate no changes in the type of the magnetic anisotropy with the increase in temperature. The results of the study of the anisotropic magnetoresistance indicate that the parameters of the magnetic anisotropy in GaMnAs are significantly influenced by the magnitude of the compressive strain.},
}