TY  - JOUR
AU  - P.B. Parchinskiy
AU  - A.S. Gazizulina
AU  - A.A. Nasirov
AU  - Sh.U. Yuldashev
TI  - Anisotropic magnetoresistance of GaMnAs:Be
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 27
IS  - 3
SP  - 302
EP  - 307
PY  - 2024
DO  - 10.15407/spqeo27.03.302
UR  - https://doi.org/10.15407/spqeo27.03.302
AB  - The effect of co-doping with Be on the magnetic anisotropy in Ga0.972Mn0.028As epitaxial layers has been studied by magnetoresistance measurements. Co-doping with Be has been shown to lead to reorientation of both easy and hard magnetic axes in GaMnAs. Measurements of the temperature dependence of the anisotropic magnetoresistance demonstrate no changes in the type of the magnetic anisotropy with the increase in temperature. The results of the study of the anisotropic magnetoresistance indicate that the parameters of the magnetic anisotropy in GaMnAs are significantly influenced by the magnitude of the compressive strain.
KW  - GaMnAs
KW  - epitaxial layers
KW  - molecular beam epitaxy
KW  - anisotropic magnetoresistance
KW  - magnetic anisotropy
KW  - easy axis
ER  -