TY  - JOUR
AU  - S.V. Sapon
AU  - M.S. Boltovets
AU  - O.A. Kulbachynskyi
AU  - V.V. Zabudsky
AU  - O.G. Golenkov
AU  - V.V. Korotyeyev
AU  - A.A. Efremov
TI  - Properties of InSb photodiodes fabricated by ion implantation
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 27
IS  - 3
SP  - 356
EP  - 365
PY  - 2024
DO  - 10.15407/spqeo27.03.356
UR  - https://doi.org/10.15407/spqeo27.03.356
AB  - InSb photodiodes were fabricated by ion implantation method. The electrical and photoelectrical properties of the photodiodes in the operating temperature range of 69…115 K were investigated. The test structures were fabricated as a part of the developed technological route. The value R0 A0, which is the product of the dynamic resistance and the diode area, was ~2·104 Ohm·cm2 at the operating temperature of 77 K for the diodes with the topological area of 0.01 mm2. The avalanche effect as well as the influence of background radiation on the I–V characteristics and dynamic resistance of the diodes were observed. The integrated ampere-watt responsivity of the fabricated InSb photodiodes to a radiant exitance of a blackbody with the temperature of 500 K was determined. The operating temperature of the InSb diode, at which the thermal and fractional noises were equal to each other, was 115 K under the conditions of the presence of background radiation with the temperature of 293 K in the aperture angle FOV ~ 30°.
KW  - infrared photodetector
KW  - InSb
KW  - responsivity
KW  - dynamic resistance
KW  - temperature influence
ER  -