Semiconductor Physics, Quantum Electronics & Optoelectronics, 28 (3), P. 267–276 (2025).
DOI: https://doi.org/10.15407/spqeo28.03.267
Physical-statistical principles of analysis of defect transformations in semiconductor structures under influence of magnetic and electromagnetic fields
G.V. Milenin1, R.A. Redko1,2
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Nauky Avenue, 03028 Kyiv, Ukraine
2State University of Telecommunications, 7 Solomenska Street, 03680 Kyiv, Ukraine
E-mail: milenin.gv@gmail.com; redko.rom@gmail.com
Abstract. The paper presents a methodology of the physical-statistical analysis of defect transformations in semiconductor structures under action of magnetic and electromagnetic fields. The probability-energy criterion of defect stability to external fields is analyzed. The mathematical foundations of the physical and statistical analysis of reconstruction of the defect structure of semiconductors under action of magnetic and electromagnetic fields are formulated. A probabilistic-physical study of time transformations of radiative recombination spectra due to action of microwave radiation and magnetic-field treatments is carried out. The mechanisms of defect reorganization under action of magnetic and electromagnetic fields on semiconductor structures are considered.
Keywords: point defect, dislocation, defect cluster, magnetic field, microwave radiation.
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