TY  - JOUR
TI  - Physical-statistical principles of analysis of defect transformations in
      semiconductor structures under influence of magnetic and electromagnetic fields
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
AU  - Milenin, G.V.
AU  - Redko, R.A.
VL  - 28
IS  - 3
SP  - 267
EP  - 276
PY  - 2025
DO  - 10.15407/spqeo28.03.267
UR  - https://doi.org/10.15407/spqeo28.03.267
AB  - The paper presents a methodology of the physical-statistical analysis of defect
      transformations in semiconductor structures under action of magnetic and
      electromagnetic fields. The probability-energy criterion of defect stability to
      external fields is analyzed. The mathematical foundations of the physical and
      statistical analysis of reconstruction of the defect structure of semiconductors
      under action of magnetic and electromagnetic fields are formulated. A
      probabilistic-physical study of time transformations of radiative recombination
      spectra due to action of microwave radiation and magnetic-field treatments is
      carried out. The mechanisms of defect reorganization under action of magnetic
      and electromagnetic fields on semiconductor structures are considered.
KW  - point defect
KW  - dislocation
KW  - defect cluster
KW  - magnetic field
KW  - microwave radiation
ER  -