TY  - JOUR
TI  - Parameter determination of ion-implanted layers of single crystals by integrated
      dynamical diffractometry
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
AU  - Nyzkova, G.I.
AU  - Romanyuk, B.M.
AU  - Dubikovskyi, O.V.
AU  - Gudymenko, O.Yo.
AU  - Kulbachynskyi, O.A.
AU  - Bilotska, A.O.
AU  - Vladimirova, T.P.
AU  - Vasylyk, Ya.V.
AU  - Skakunova, O.S.
AU  - Demchik, I.I.
AU  - Makarenko, L.I.
AU  - Lizunova, S.V.
AU  - Zabolotny, I.M.
AU  - Molodkin, V.V.
AU  - Kononenko, O.S.
AU  - Lizunov, V.V.
VL  - 28
IS  - 3
SP  - 284
EP  - 291
PY  - 2025
DO  - 10.15407/spqeo28.03.284
UR  - https://doi.org/10.15407/spqeo28.03.284
AB  - X-ray diffraction methods are highly informative for investigation of crystal
      structure imperfections. They are widely applied to determine the
      characteristics of structural defects in various materials. In this work, by
      processing experimentally measured azimuthal dependences of the total integrated
      intensity of dynamical diffraction for three asymmetric Bragg reflections for a
      Si single crystal irradiated with boron ions, the thicknesses of the amorphous
      absorbing surface layer and the kinematically scattering layer as well as the
      concentration of randomly distributed dislocation loops in the dynamically
      scattering volume located under the above-mentioned disturbed surface layers are
      obtained.
KW  - phase variation diagnostics
KW  - azimuthal dependence
KW  - defects
ER  -