TY  - JOUR
TI  - Bilayer MoS2 phototransistor deposited on a flexible substrate
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
AU  - Petrosyan, S.G.
AU  - Khachatryan, A.M.
AU  - Petrosyan, P.G.
VL  - 28
IS  - 3
SP  - 315
EP  - 321
PY  - 2025
DO  - 10.15407/spqeo28.03.315
UR  - https://doi.org/10.15407/spqeo28.03.315
AB  - A new phototransistor with a MoS2 bilayer deposited on a polyimide substrate was
      fabricated using pulsed-laser deposition technique. The structural and optical
      properties of the bilayer MoS2 films were characterized by Raman,
      photoluminescence and optical absorption spectroscopy. The photocurrent
      generated by a laser light with the wavelength of 532 nm in the top gate
      flexible field effect transistor was determined for specified drain and gate
      voltages. The photoresponsivity of the device could be adjusted over a wide
      range by controlling the gate and drain voltages. At this, the photoresponsivity
      value could exceed 12.5 mA/W. The structure showed switching behavior with a
      characteristic time of approximately 10 ms in response to pulsed illumination.
      The photocurrent changed significantly due to compressive or tensile strain
      induced by the bent substrate, which affected the band-gap value of the
      ultrathin MoS2 layers. The proposed structure may find potential applications in
      flexible electronics, such as e.g. for nanoscale flexible photodetectors or
      stress sensors.
KW  - bilayer MoS2
KW  - flexible substrate
KW  - phototransistor
KW  - strain
ER  -