Semiconductor Physics, Quantum Electronics & Optoelectronics, 29 (3), P. 317-322 (2026).
DOI: https://doi.org/10.15407/spqeo29.03.317

Processes of mass transfer and formation of inversion and graded-gap layers in CdTe-based solid solutions irradiated with nanosecond pulses

S.M. Levytskyi

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
E-mail: levytskyism@gmail.com

Abstract. This article presents the results of the study of modification of CdTe surface layer using optical methods as well as a direct effect of laser irradiation on the properties of CdTe using the induced dynamic lattice method. The effectiveness of optical probing in the study of laser-induced processes in A₂B₆ compounds has been demonstrated. In addition to optical methods, the induced dynamic lattice method has been used to determine the properties of the studied material before and after laser irradiation. The photoluminescence of laser-modified CdTe samples has been also studied. The obtained results significantly expand current understanding of the interaction mechanisms between high-power laser radiation and semiconductor structures. This opens up promising opportunities for precise control over the physical characteristics of materials during the development of new electronic devices.

Keywords: А²В⁶, CdTe, laser irradiation, photoluminescence, laser doping.