Semiconductor Physics, Quantum Electronics & Optoelectronics, 29 (3), P. 354-360 (2026).
DOI: https://doi.org/10.15407/spqeo29.03.354

Spectroscopic ellipsometry evidence of Mn level hybridization in (Ga,Mn)(As,P)

O.B. Yastrubchak^1,*, S.V. Mamykin¹, V.R. Romanyuk¹, O.S. Kondratenko¹, L.V. Borkovska¹, L.Yu. Khomenkova ¹, V.V. Kalyuzhny¹, O.V. Shtykalo¹, O.F. Kolomys¹, X. Liu², J.K. Furdyna², B.A. Assaf²

¹V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 03028 Kyiv, Ukraine
²Department of Physics and Astronomy, University of Notre Dame, Notre Dame, IN 46556, USA
^*Corresponding author e-mail: plazmonoki@gmail.com

Abstract. We demonstrate direct spectroscopic control of Mn-derived electronic states in the diluted ferromagnetic semiconductor (Ga,Mn)(As,P) via phosphorus incorporation at fixed Mn concentration. Using spectroscopic ellipsometry, we observe a systematic evolution from strongly p–d hybridized Mn–valence-band states at low P content to localized, atomic-like Mn d-derived states at high P content. This evolution is manifested by a transition from broad optical absorption features (2.0–2.8 eV), which weaken upon annealing, to a sharp, annealing-insensitive absorption peak (2.6–2.9 eV), accompanied by a P-dependent shift of the valence band relative to the Fermi level. These results establish phosphorus substitution as an independent control parameter for Mn–host matrix electronic hybridization, decoupled from Mn concentration. The systematic evolution of the Mn-related spectral features indicates that P incorporation can modify the balance between more delocalized, valence-band–like and more localized Mn-derived states. Our spectroscopic results indicate that the nature of Mn-related states depends on the material composition.

Keywords: dilute ferromagnetic semiconductors, p–d hybridization, (Ga,Mn)(As,P) alloys, spectroscopic ellipsometry.