https://doi.org/10.15407/spqeo2.03.026
oPACS 84.60.J, 72.20.J
Effect of emitter proprties on the conversion efficiency of silicon solar cells
A.P. Gorban, V.P. Kostylyov, A.V. Sachenko
Semiconductor Physics, Quantum Electronics and Optoelectronics - 1999. - 2, ¹3. - P.26-31. - Engl. Il.: 6. Ref.: 13.
Abstract. The effect of donor concentration distribution N(x) in the n+-emitter on the conversion efficiency h of silicon n+-p-p+ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into consideration together with band-to-band Auger recombination. The calculation is performed in the approximation when in the region with changing concentration a small part of generated electron-hole pairs recombines.
It is shown that, in general, the correlation between h and p-n - junction depth is absent.
Keywords: silicon solar cell, photoconversion effiiciency, p-n junction.
[Contents]
Full text in PDF (Portable Document Format) are available for free. [PDF 140K]
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.