https://doi.org/10.15407/spqeo2.03.032
Pacs: 84.60.J; 72.20.J
Conversion efficiency in silicon solar cells with spatially non-uniform doping
A.V. Sachenko, N.A. Prima, A.P. Gorban
Semiconductor Physics, Quantum Electronics and Optoelectronics - 1999. - 2, ¹3. - P.32-37. - Engl. Il.: 5. Ref.: 15.Abstract. The conversion efficiency of diffusion-type silicon solar cells, h, is studied theoretically in assumption of different doping levels existing under collection grid contacts and within the inter-contact spacing. It is shown that at high under-contact doping levels and at relatively low inter-contact doping ones the conversion efficiency increases as compared to uniform doping case. The dependence of h on Shockley-Reed-Hall carrier lifetimes both in the base and in the top-surface n+-layer as well as on the depth of p-n-junction and the shape of electron concentration profile, N(x), in the n+-region is analysed.
Keywords: silicon solar cell, p-n-junction, conversion efficiency.
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