PACS: 73.30; 85.30.H, K

Effect of rapid thermal annealing on properties of contacts Au-Mo-TiB_x-GaAs

E.F. Venger, A.A. Beliaev, N.S. Boltovets*, I.B. Ermolovich, V.N. Ivanov*, R.V. Konakova, V.V. Milenin, D.I.Voitsikhovski**, T. Figielski**, A. Makosa**

Semiconductor Physics, Quantum Electronics and Optoelectronics - 1999. - 2, №3. - P.57-61. - Engl. Il.: 4. Ref.: 7.

Abstract. The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with Schottky barrier Au-Mo-TiBx-GaAs. It was shown that the rapid thermal annealing at T = 600 °C during 60 sec in hydrogen atmosphere results in creating the ELS type center in the space charge region of GaAs. This center is represented by the complex VGa+VAs, which has been confirmed by photoluminescence measurements. It causes the appearance of excess current at the initial part of current-voltage characteristic.

Keywords: metal-semicond contact, repid thermal annealing, deep centers.

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