Semiconductor Physics, Quantum Electronics and Optoelectronics, 2 (3) P. 021-025 (1999).
References
1. C.T.Elliot and N.T.Gordon, Infrared Detectors, in Handbook on Semiconductors, Vol.4, pp.841-936, Ed. by C.Hilsum, North-Holland, Amsterdam (1993).
2. J.R.Lowney, D.G.Seiler, C.L.Littler and I.T.Yoon, Intrinsic carrier concentration of narrow gap mercury cadmium telluride// J.Appl.Phys. 71, pp.1253-1258 (1992). https://doi.org/10.1063/1.351371
3. J.Y.Wang, Effect of trap tunneling on the performance of long-wavelength Hg1-xCdxTe photodiodes // IEEE Trans. on Electron Devices ED - 27 (1), pp.48-57 (1980). https://doi.org/10.1109/T-ED.1980.19818
4. Y.Nemirovsky, D.Rosenfeld, R.Adar, and A.Kornfeld, Tunneling and dark currents in HgCdTe photodiodes // J.Vac.Sci.Technology A7 (2), pp.528-535 (1989). https://doi.org/10.1116/1.576215
5. N.L.Bazhenov, S.I.Gasanov and V.I.Ivanov-Omskii, Excess currents in narrow-gap Hg1-xCdxTe p-n junctions // Infrared Phys. 34 (1), pp.37-41 (1993). https://doi.org/10.1016/0020-0891(93)90030-B
6. Akira Ajisawa and Naoki Oda, Improvement in HgCdTe diode characteristics by low temperature post-implantation annealing // J.Electron. Materials 24 (9), pp.1105-1111 (1995). https://doi.org/10.1007/BF02653060
7. D.Rosenfeld and G.Bahir, A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n+-p HgCdTe photodiodes // IEEE Trans. on Electron Dev. 39 (7), pp.1638-1645 (1992). https://doi.org/10.1109/16.141229
8. Y.Nemirovsky, R.Fastow, M.Meyassed, and A.Unikovsky, Trapping effects in HgCdTe //J.Vac.Sci.Technol. B.9 (3), pp.1829-1839 (1991). https://doi.org/10.1116/1.585808
9. R.E.Dewames, J.G.Pasko, E.S.Yao, A.H.B.Vanderwyck, and G.M.Williams, Dark current generation mechanisms and spectral noise carrent in long-wavelength infrared photodiodes // J.Vac.Sci.Technol. A6, p.2655 (1988). https://doi.org/10.1116/1.575526
10. Tian, Ji Zhongyun, Lei Ruoxi, Gu Shengqiong, Boqi, Measurements of noise of photovoltaic HgCdTe and InSb infrared detector // Proc.SPIE 2894, pp.174-179 (1996). https://doi.org/10.1117/12.252111
11. Wenmu He and Zeynep Celik-Butler, Temperature dependence of 1/f noise in Hg1-xCdxTe MIS infrared detectors // Trans. Electron Dev. 42 (1), pp.160-165 (1995). https://doi.org/10.1109/16.370022
12. R.Schiebel, D.Bartolomew, M.Bevan, R.S.List, and M.Ohlson, Noise and material defects in HgCdTe diodes // Journal of Elecrtonic Materials 24 (9), pp.1299-1203 (1995). https://doi.org/10.1007/BF02653088
13. S.R.Babu, K.Hu, Manthripragada et al., Improved HgCdTe detectors with novel anti-reflection coating //Proc. SPIE 2816, pp.84-89 (1995).
14. Wenmu He and Zeynep Celik-Butler, 1/f noise and dark current components in HgCdTe MIS infrared detectors // Solid - State Electronics 1 (1), pp.127-132 (1996). https://doi.org/10.1016/0038-1101(95)00089-C
15. W.A.Radford, and C.E.Jones, 1/f noise in ion-implanted and doublelayer epitaxial HgCdTe photodiodes // J.Vac.Sci.Technol. A3 (1), pp.183-188 (1985). https://doi.org/10.1116/1.573195
16. C.E.Jones, V.Nair, and D.L.Polla, Generation-recombination centers in p-type HgCdTe // Appl. Phys. Lett. 39 (3), pp. 248-250 (1981). https://doi.org/10.1063/1.92702