Semiconductor Physics, Quantum Electronics and Optoelectronics, 4 (4) P. 278-282 (2001).
References
1. E. R. Weber, S. A. McHugo, H. Hieslmair, Gettering of transition metals in multicrystalline silicon for photovoltaic applications // Solid State Phenomena, 47-48, p.p. 165 - 170, (1996) https://doi.org/10.4028/www.scientific.net/SSP.47-48.165
2. N. Gayhenquet, S. Martinuzzi, Efficiency of nanocavity backside gettering in multicrystalline silicon wafers // Proc. 2nd World Conf. on Photovoltaic Solar Energy Conversion. 6 - 10 July 1998, Vienna, Austria., p.p. 1599 - 1602
3. W. Jooss, G. Hahn, P. Fath et al., Improvement of diffusion lengths in multicrystalline Si by P-Al co-gettering during solar cell processing // Ibid, p.p. 1689 - 1692
4. S. Ostapenko, L. Jastrzebski, B. Sopori, Change of minority carrier diffusion length in polycrystalline silicon by ultrasound treatment // Semicond. Sci. Technol., 10 (8), p.p. 1494 - 1500,(1995) https://doi.org/10.1088/0268-1242/10/11/011
5. P. Menna, Y. S. Tsuo, M. M. Al-Jassim et al., Purification of metallurgical-grade silicon by porous-silicon etching // Proc.2nd World Conf. on Photovoltaic Solar Energy Conversion. 6 -10 July 1998, Vienna, Austria, p.p. 1232 - 1235
6. L. Schirone, G. Sotgiu, M. Montecchi, G. Righini, R. Zanoni, Stain etched porous silicon technology for large area solar cells // Proc. 2nd World Conf. on Photovoltaic Solar Energy Conversion. 6 - 10 July 1998, Vienna, Austria, p.p. 276 - 279
7. S. M. Sze, Physics of semiconductor devices, A Wiley-Interscience Publ., N.Y., 1981.
8. V. P. Bondarenko, V. T. Borisenko, V. A. Labunov, Diffusion of arsenic through porous silicon at second thermo-treatment by non-coherent light // Semiconductors, 20(5), p.p. 929 - 933(1986)
9. V. G. Popov, Solar cells based on multicrystalline silicon // Semiconductor Physics, Quantum Electronics & Optoelectronics, 3(4), p.p. 479 - 488 (2000) https://doi.org/10.15407/spqeo3.04.479
10. V. G. Litovchenko, N. I. Klyui, A. A. Evtukch, et al., New gettering procedures for fabrication of solar cells with improved parameters // Proc. 7th Arab Int. Solar Energy Conf & Regional World Renewable Energy Congress, 19 - 22 Febr., 2001,Sharjah, UAE, Book of Abstracts, p.p. 305 - 306
11. A. A. Efremov, N. I. Klyui, V. G. Litovchenko, et al, Development of gettering processes for the preparation of the solar silicon material // Proc European Conf. on Photovoltaics &JOULE PV III Contractors' Meeting,25 - 27 Oct., 1999, Krakow,Poland. Abstracts, p. 24
12. V. G. Litovchenko, N. I. Klyui, A. A. Evtukh, et al., Solar cells prepared on multicrystalline silicon subjected to new gettering and passivation treatments // EMRS-2001 Spring Meeting, June 5 - 8, 2001, Strasbourg, France. Final Book of Abstracts, p. E-19.
13. Standard Test Methods for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurements of Steady-State Surface Photovoltage. ASTM Designation: F391-96, published: April 1996 // Annual Book of ASTM Standards, v. 10.05(Electronics II), p.p. 150 - 158.