Semiconductor Physics, Quantum Electronics and Optoelectronics, 5 (4) P. 343-346 (2002).
References
1. N. Peranio, A. Rosenauer, D. Gerthsen, S.V. Sorokin, I.V. Sedova, S.V. Ivanov, Structural and chemical analysis of CdSe/ZnSe nanostructures by transmission electron microscopy // Phys. Rev. B 61, 16015-16024 (2000). https://doi.org/10.1103/PhysRevB.61.16015
2. D. Litvinov, A. Rosenauer, D. Gerthsen, N.N. Ledentsov, Character of the Cd in ultrathin CdSe layers in a ZnSe matrix // Phys. Rev. B 61, 16819-16826 (2000). https://doi.org/10.1103/PhysRevB.61.16819
3. M.Ya. Valakh, S.V. Ivanov, N. Mestres, J. Pascual, T.V. Shubina, S.V. Sorokin, V.V. Streltchuk, G. Pozina, B. Monemar, Optical investigation of CdSe/ZnSe quantum nanostructures // Semicond. Sci. Technolog. 17173-177 (2002). https://doi.org/10.1088/0268-1242/17/2/315
4. L.V. Borkovska, M.Ya. Valakh, E. F. Venger, Yu.G. Sadofyev, N.O. Korsunska, V.V. Strelchuk, G.N. Semenova, M.V. Vuychik, Investigation of inhomogeneous broadening of CdSe/ZnSe nanoisland photoluminescence band by resonant excitation methods // Physica E (2003) (in press). https://doi.org/10.1016/S1386-9477(02)00705-1
5. D.A. Mazurenko, A.V. Scherbakov, A.V. Akimov, A.J. Kent, M. Henini, Enchancement of luminescence intensity induced by 1.06 mm excitation in InA s/GaAs quantum dots // Semicond. Sci. Technolog. 141132-1135 (1999). https://doi.org/10.1088/0268-1242/14/12/321
6. T. Kita, T. Nishino, C. Geng, F. Scholz, H. Schweizer, Dynamic process of anti-Stokes photoluminescence at a longrange-ordered Ga0.5In0.5P/GaAs heterointerface // Phys. Rev. B59, 15358-15362 (1999). https://doi.org/10.1103/PhysRevB.59.15358
7. P.P. Paskov, P.O. Holtz, B. Monemar, J.M. Garcia, W.V. Schoenfeldand, P.M. Petroff, Optical up-conversion processes in InAs quantum dots // Jpn. J. Appl. Phys. 40(3B), 2080-2083 (2001). https://doi.org/10.1143/JJAP.40.2080
8. I.V. Ignatiev, I.E. Kozin, H.W. Ren, S. Sugou, Y. Masumoto, Anti-Stokes photoluminescence of InP self-assembled quantum dots in the presence of electric current // Phys. Rev. B60,R14001-R14004 (1999). https://doi.org/10.1103/PhysRevB.60.R14001
9. S.V. Ivanov, A.A. Toropov, T.V. Shubina, S.V. Sorokin, A.V.Lebedev, I.V. Sedova, P.S. Kop'ev, G.R. Pozina, J.P. Bergman, B. Monemar, Growth and excitonic properties of single fractional monolayer CdSe/ZnSe structures // J. Appl.Phys. 83, 3168-3171 (1998). https://doi.org/10.1063/1.367130
10. C.S. Kim, M. Kim, S. Lee, J.K. Furdyna, M. Dobrowolska, H. Rho, L.M. Smith, H.E. Jackson, Optical observation of quantum-dot formation in sub-critical CdSe layers grown on ZnSe // J. Cryst. Growth, 214/215, 761-764 (2000). https://doi.org/10.1016/S0022-0248(00)00221-9
11. K.M. Lee, Le Si Dang, G.D. Watkins, Optically detected magnetic resonance of the zinc vacancy in ZnSe // Solid State Commun.35, 527-530 (1980). https://doi.org/10.1016/0038-1098(80)90889-3
13. I. Yamakawa, S. Sorokin, A. Toropov, S. Ivanov, A. Nakamura. Catodoluminescence studi of quantum-size and alloying effects in single fractional monolayer CdSe/ZnSe structures // Jpn. J. Appl. Phys.39(8B), L851-L854 (2000). https://doi.org/10.1143/JJAP.39.L851