Semiconductor Physics, Quantum Electronics and Optoelectronics, 6 (4) P. 492-495 (2003).
References
1. A.G. Cullis, L.T. Canc ham, P.D. Calcott, The structural and luminescence properties of porous silicon // Applied Physics Reviews, 82, P. 909-965 (1997). https://doi.org/10.1063/1.366536
2. M.Y. Ghannam, A.A. Abouelsaood, J.F. Nijs, A semiquan-titative model of a porous silicon layer used as a light diffuser in a thin film solar cell. // Solar Energy Materials &Solar Cells, 60, P. 105-125 (2000). https://doi.org/10.1016/S0927-0248(99)00052-5
3. Y. Arita, Y. Sunohara, Formation and prorerties of porous silicon films // J. Electrochem. Soc. 124 (2), P.285-294 (1977). https://doi.org/10.1149/1.2133281
4. S.Kalem, M. Rosenbauer, Optical and structural investigation of stain-etched silicon // Appl. Phis. Lett., 67(17), P. 2551-1553 (1995). https://doi.org/10.1063/1.114429
5. S. Shin, K.H. Jung, T.Y. Hsieh, J. Sarathy, J.C. Campbell, D.L. Kwong, Photoluminescence and formation mechanism of chemically etched silicon // Appl. Phis. Lett., 60(15),P. 1863-1865 (1992). https://doi.org/10.1063/1.107162
6. V.M. Starodub, L.L. Fedorenko, G.V. Beketov, N.F. Starodub, Obtaining, characterization and use of porous silicon for biosensing purposes // Abstr. of Conf. Porous Semiconductors ñ Science and Technologi, P. 108-110 (1998)
7. N.E. Korsunskaya, E.B. Kaganovich, L.Yu. Khomenkova, B.M. Bulach, B.R. Dzumaev, G.V. Beketov, E.G. Manoilov, Effect of adsorbtion and desorption on photoluminescence excitation spectra of porous silicon // Applied Surface Science, 166, P.349-353 (2000). https://doi.org/10.1016/S0169-4332(00)00448-7