Semiconductor Physics, Quantum Electronics and Optoelectronics, 7 (4) P. 372-376 (2004).
References
1. N.L. Dmitruk, О.Yu. Borkovskaya, R.V. Konakova, I.B. Mamontova, S.V. Mamikin, D.I. Voytsikhovskyi, Influence of a scale-irradiation on the characteristics of phototransformation of barrier structures metal - gallium arsenide with the microrelief by border undressed // Technical Physics Letters 72 (6), p. 44 (2002).
2. V.I. Shashkin, А.V. Murel, V.М. Daniltsev, О.I. Hrikin, Management of character transfer of current in a barrier Shottky with the help delta-alloyage: account and experiment for Al/GaAs // Semiconductors 36 (5), p. 537 (2002). https://doi.org/10.1134/1.1478540
3. Т.Ya. Gorbach, Е.V. Pidlisniy, S.V. Svechnikov, Morphology and properties of anisotropically etched gallium arsenide // Optoelectronics and semiconductor technics 13, p. 34-39 (1988) (in Russian).