References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 8 (4) P. 095-104 (2005).

References

1. A.S. Tager, Prospects of indium phosphide application in the semiconductor microwave electronics, in: Indium phosphide application in semiconductor electronics, ed. S.I. Radautsan. Shtiintsa, Kishinev (1988) p. 120-132 (in Russian).

2. V.G. Bozhkov, V.S. Lukash, Semiconductor micro-wave devices // Vestnik Tomskogo Gosudar-stvennogo Universiteta, Ser. Fizika No 285, p. 129-138 (2005) (in Russian).

3. Dargys, J. Kundrotas, Handbook of physical properties of Ge, Si, GaAs and InP. Science and Encyclopedia Publishers, Vilnius (1994).

4. M.V. Ardyshev, V.M. Ardyshev, Characteristics of gallium arsenide Gunn structures and Gunn devices on their basis made using radiation-thermal technology // Fiz. Tekhn. Poluprov. 37(4), p. 456-459 (2003) (in Russian). https://doi.org/10.1134/1.1568464

5. V.V. Mamutin, V.P. Ulin, V.V. Tretyakov, S.V. Ivanov, S.G. Konnikov, P.S. Kopiev, Obtaining of cubic GaN with molecular-beam epitaxy on porous GaAs substrates // Pis'ma v ZhTF. 25(1), p. 3-9 (1999) (in Russian). https://doi.org/10.1134/1.1262360

6. F.Yu. Soldatenkov, V.P. Ulin, A.A. Yakovenko, O.M. Fedorova, S.G. Konnikov, V.I. Korolkov, Unstrained epitaxial films of InxGa1-xAs formed on porous GaAs // Pis'ma v ZhTF25(21), p. 15-20 (1999) (in Russian). https://doi.org/10.1134/1.1262659

7. Yu.N. Buzynin, S.A. Gusev, V.M. Daniltsev, M.N. Drozdov, A.V. Murel, O.I. Khrykin, V.I. Shashkin, Single-crystalline layers of GaAs, AlGaAs and InGaAs formed with LPE technique from metal-organic compounds on porous gallium arsenide substrates // Pis'ma v ZhTF26(7), p. 64-69 (2000) (in Russian). https://doi.org/10.1134/1.1262823

8. A.A. Akopyan, O.Yu. Borkovskaya, N.L. Dmitruk, A.V. Karimov, R.V. Konakova, V.V. Milenin, A.V. Sachenko, M.N. Tursunov, D.M. Yodgorova, Photoconverters with AlGaAs/GaAs heterojunction on textured GaAs substrates (Physico-technological aspects). Fan Publishers, Tashkent (2004).

9. A.A. Sitnikova, A.V. Bobyl, S.G. Konnikov, V.P. Ulin, Peculiarities of epitaxial film formation on porous AIIIBVsubstrates // Fiz. Tekhn. Poluprov. 39(5), p. 552-556 (2005) (in Russian). https://doi.org/10.1134/1.1923558

10. N.S. Savkina, V.V. Ratnikov, V.B. Shuman. Effect of high-temperature epitaxial process of SiC layer growth on the structure of porous silicon carbide // Fiz. Techn. Poluprov. 35(2), p. 159-163 (2001) (in Russian). https://doi.org/10.1134/1.1349922

11. I.L. Shulpina, V.V. Ratnikov, N.S. Savkina, V.B. Shuman. X-ray diffraction study of the actual structure of homoepitaxial layers grown on porous 6H- and 4H-SiC substrates // Poverkhnost' No 6, p.18-22 (2005) (in Russian).

12. I.N. Arsentyev, M.V. Baydakova, A.V. Bobyl, L.S. Vavilova, S.G. Konnikov, V.P. Ulin, N.S. Boltovets, R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi, Structural and electrical characteristics of InP epitaxial layers on porous substrates and parameters of Au−Ti Schottky barriers to them // Pis'ma v ZhTF28(17), p. 57-66 (2002) (in Russian). https://doi.org/10.1134/1.1511769

13. A.V. Ovchinnikov, Ph.D. Thesis, The development of liquid-phase manufacturing technology for InGaAs/InP (λ= 1.3 μm) laser structures (for FOCL) with ultra-thin active areas. Leningrad, A.F. Ioffe Physico-Technical Institute of RAN (1988) (in Russian).

14. S. Langa, I.M. Tiginyanu, J. Carstensen, M. Christophersen, H. Fölla, Formation of porous layers with different morphologies during anodic etching of n-InP // Electrochem. Solid-State Lett. 3(11), p. 514-516 (2000). https://doi.org/10.1149/1.1391195

15. E.P. Domashevskaya, V.A.Terekhov, V.M. Kashkarov, S.Yu. Turischev, S.L. Molodtsov, D.V. Vyalykh, D.A. Vinokurov, V.P. Ulin, S.G. Konnikov, M.V. Shishkov, I.N. Arsentyev, I.S. Tarasov, Zh.I. Alferov, Concurrent investigations of electronic energy spectrum in A3B5-type nanostructures. // Fiz. Tekhn. Poluprov. 37(8), p. 1017-1022 (2003) (in Russian). https://doi.org/10.1134/1.1601670

16. M.G. Milvidsky, V.B. Osvensky, Structural defects in epitaxial layers of semiconductors. Metallurgiya, Moscow (1985) (in Russian).

17. I.N. Arsentyev, A.V. Bobyl, N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, V.V. Milenin, I.S. Tarasov, A.E. Belyaev, E.V. Rusu, New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis // In: Proc. 14th intern. Crimean conference "Microwave & Telecommunication Technology" (CriMiCo'2004). 13−17 Sept. 2004. Veber, Sevastopol (2004) p. 528-529. https://doi.org/10.1109/CRMICO.2004.183319

18. E.H. Roderick, Metal−semiconductor contacts.Clarendon Press, Oxford (1978).