Semiconductor Physics, Quantum Electronics and Optoelectronics, 11 (4) P. 311-318 (2008).
DOI:
https://doi.org/10.15407/spqeo11.04.311
References
1. The International Technology Roadmap for Semiconductors, Semiconductor Industry Association: http://public.itrs.net . | | 2. R.M. Wallace, G.D. Wilk. Alternative gate dielectrics for microelectronics // MRS Bul. 27(3), p. 186-189 (2002). https://doi.org/10.1557/mrs2002.70 | | 3. E. Atanassova, T. Dimitrova. Thin Ta2O5 layers on Si as an alternative to SiO2 for high-density DRAM applications, in: Handbook of Surfaces and Interfaces of Materials, Ed. H.S. Nalva, 4, p. 439- 479, San Diego, CA, Academic Press, USA, 2001. https://doi.org/10.1016/B978-012513910-6/50055-4 | | 4. J. Robertson, P.W. Peacock. Atomic structure, band offsets, growth and defects at high-k oxide:Si interfaces // Microel. Eng. 72(1-4), p. 112-120 (2004). https://doi.org/10.1016/j.mee.2003.12.026 | | 5. High-k Gate Dielectrics. Ed. M. Houssa. Inst. of Physics Publishing. Bristol, 2004. | | 6. E.P. Gusev, V. Narayanan, M.M. Frank. Advanced high-k dielectric stacks with poly Si and metal gates: Recent progress and current challenges // IBM J. Res. Dev. 50(4/5), p. 387-410 (2006). https://doi.org/10.1147/rd.504.0387 | | 7. E. Atanassova, A. Paskaleva. Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs // Microel. Reliab. 47(6), p. 913-923 (2007). https://doi.org/10.1016/j.microrel.2006.06.006 | | 8. D. Spasov, E. Atanassova, D. Virovska. Electrical characteristics of Ta2O5 based capacitors with different gate electrodes // Appl. Phys. A 82(1), p. 55-62 (2006). https://doi.org/10.1007/s00339-005-3300-7 | | 9. V.A. Pilipenko, V.N. Ponomar, T.V. Petlitskaya. Charge properties of a capacitor system based on two-layer SiO2−Ta2O5 insulator // Inzh. Fiz. Zhurn. 76(1), p. 164-166 (2003) (in Russian). https://doi.org/10.1023/A:1022904316914 | | 10. Ya.Ya. Shik, L.G. Bakueva, S.F. Musikhin, S.A. Rykov. Physics of Low-dimensional Systems. Nauka, St-Peterburg, 2001 (in Russian). | | 11. E.F. Venger, L.A. Matveeva, P.L. Nelyuba. Effect of manufacturing technology on the parameters of interfaces in traditional and low-dimensional Si−SiO2 structures // Novi Tekhnologii. Naukovyi Visnyk KUEITU 20(2), p. 39-42 (2008) (in Russian). | | 12. E.F. Venger, L.A. Matveeva, P.L. Nelyuba, A.P. Klimenko. Diagnostics of low-dimensional systems with surface quantization of charge carriers energy, in: Proc. VI Sc.-Tech. Conf. "Organization of Nondestructive Control of Production Quality in Industry", 18−25 April 2008, Taba, Turkey, p. 24- 27 (in Russian). | | 13. N. Novkovski, E. Atanassova. Frequency dependence of the effective series capacitance of metal-Ta2O5/SiO2−Si structures // Semicond. Sci. Technol. 22(5), p. 533-536 (2007). https://doi.org/10.1088/0268-1242/22/5/013 | | 14. E. Atanassova, A. Paskaleva. Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs // Microelectron. Reliab. 42(2), p. 157-173 (2002). https://doi.org/10.1016/S0026-2714(01)00248-7 | | 15. E. Atanassova, M. Kalitzova, G. Zollo, A. Paskaleva, A. Peeva, M. Georgieva, G.Vitali. High temperature induced crystallization in tantalum pentoxide layers and its influence on the electrical properties // Thin Solid Films 426(1-2), p. 191-199 (2003). https://doi.org/10.1016/S0040-6090(03)00027-0 | | 16. E. Atanassova, N.S. Boltovets, E.Yu. Kolyadina, R.V. Konakova, J. Koprinarova, L.A. Matveeva, V.V. Milenin, V.F. Mitin, V.V. Shynkarenko, D.I. Voitsikhovskyi. Structural-phase ordering in Ta2O5−p-Si heterosystem enhanced by microwave processing, in: Proc. 23rd Intern. Conf. on Microelectronics (MIEL 2002) Niš, Yugoslavia, 12-15 May 2002, 2, p. 531-534. | | 17. Hoffman R.W. Mehanical properties of thin condenced films. In: G. Hass, R.E. Thun, Physics of thin films, vol. 3. Academic Press, New York and London, 1966, p. 225-298. | | 18. A. Dargys, J. Kundratas. Handbook on Physical Properties of Ge, Si, GaAs and InP. Science and Encyclopedia Publishers, Vilnius, 1994. | | 19. P. Yu, M. Cardona, Fundamentals of Semiconductors. Physics and Materials Properties. Springer, Berlin, Heidelberg, 2002. | | 20. D.E. Aspnes, J.E. Rowe. High-resolution interband-energy measurements from electroreflectance spectra // Phys. Rev. Lett. 27(4), p. 188-190 (1971). https://doi.org/10.1103/PhysRevLett.27.188 | | 21. D.E. Aspnes, J.E. Rowe. Asymptotic convolution integral for electric field effects on the interband dielectric function // Solid State Communs 8(14), p. 1145-1149 (1970). https://doi.org/10.1016/0038-1098(70)90014-1 | | 22. R.Yu. Holiney, L.A. Matveeva, E.F. Venger. Investigation of the undersurface damages layers and silicon wafers // SQO 2(4), p. 10-12 (1999). | | 23. G.L. Bir, G.E. Pikus. Symmetry and Strain-Induced Effects in Semiconductors. Wiley, New York, 1974. | | 24. O.Yu. Borkovskaya , N.L. Dmitruk , R.V. Konakova, V.G. Litovchenko, Yu.A. Tkhorik, B.I. Shakhovtsov. Effects of radiation-induced ordering in the layered structures based on III−V compounds // Preprint No.6, Inst. of Physics, AN UkrSSR, Kiev (1986) (in Russian). | | 25. N.L. Dmitruk. Surface-enhanced radiation ordering in semiconductor structures, in: Fundamental Problems of Ion Implantation, p. 60-81. Nauka KazSSR, Alma-Ata, 1987 (in Russian). | | 26. N.L. Dmitruk, R.V. Konakova. Surface-enhanced radiation ordering in semiconductor heterostructures // Vestnik AN UkrSSR No.6, p. 18-30 (1999) (in Russian). | | 27. Physical Processes in Irradiated Semiconductors, Ed. L.S. Smirnov. Nauka, Novosibirsk, 1977 (in Russian). | | 28. G.D. Watkins. A rewiev of EPR studies in irradiated silicon, in: Effets des Rayonnement sur les Semi-conducteurs, Ed. P. Baruch, p. 97-113, Dunod, Paris, 1964. | | 29. E.Yu. Brailovskii, L.A. Matveeva, G.N. Semenova, L.S. Khazan, Yu.A. Tkhorik. Radiation-stimulated relaxation of internal stress in heteroepitaxial systems // Phys. status solidi (a) 66(1), p. K59-K62 (1981). https://doi.org/10.1002/pssa.2210660163 | | 30. A.A. Belyaev, A.E. Belyaev, I.B. Ermolovich, S.M. Komirenko, R.V. Konakova, V.G. Lyapin, V.B. Milenin, E.A. Solov'ev, M.V. Shevelev. Influence of microwave treatment on the electrophysical characteristics of technically important semiconductors and surface-barrier structures // Techn. Phys. 43(12), p. 1445-1449 (1998). https://doi.org/10.1134/1.1259222 | | 31. R.V. Konakova, P.M. Lytvyn, O.Ya. Olikh. Effect of microwave processing on deep levels in GaAs and SiC single crystals // Peterburgsky Zhurnal Elektroniki No.1, p. 20-23 (2004) (in Russian). | | 32. V.I. Pashkov, V.A. Perevoshchikov, V.D. Skupov. Effect of annealing in a microwave radiation field on the residual strain and impurity composition of subsurface layers of silicon // Techn. Phys. Lett. 20(4), p. 310-311 (1994). | |
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