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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 4. P. 348-352.
The study of solar cells with back side contacts at low illumination
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
45, prospect Nauky, 03028 Kyiv, Ukraine; e-mail: sach@isp.kiev.ua
Abstract. Theoretical analysis and experimental research of Si solar cells (SC) with
interdigitated back side contacts (BSC) photovoltaic parameters and photoconversion
efficiency at low light level have been done in presence of floating junctions and
isotype junctions on frontal (illuminated) surface. It has been found that in case
of floating junction the magnitudes of short-circuit current, open-circuit voltage and
efficiency, as well as of internal quantum efficiency of photocurrent can decrease
significantly due to recombination in the space charge region (SCR) rather than to
surface recombination. In case of isotype junction, this decrease is absent. These results
allow to conclude that the floating junctions at the front surface of the silicon
BSC SC would be appropriate for use only in case of an illumination intensity
1000 W/m.
Keywords: solar cell efficiency, back contact, space charge region recombination.
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