|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 4. P. 363-365.
Effect of pressure on the characteristics of Schottky barrier diodes
made of overcompensated semiconductor
Berdakh Karakalpak State University, Nukus, Uzbekistan
E-mail: Ismailov_k@mail.ru
Abstract. We studied the effect of uniform compression on characteristics of Au–n-Si
Schottky barrier diodes made of overcompensated semiconductor. It is shown that
overcompensation is caused by formation of structural defects owing to thermal
treatment of the initial silicon wafers.
Keywords: Schottky barrier diode, overcompensated semiconductor, structural defect.
| ||