|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 4. P. 384-388.
Magnetic susceptibility of n- and p-Si single crystals
containing thermodonors
1Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky,
03028 Kyiv, Ukraine; e-mail: babich@isp.kiev.ua
Abstract. Using a series of experimental methods (Hall effect, electron paramagnetic
resonance and magnetic susceptibility (MS, χ)) comparison has been made for the
kinetics of formation inherent to different types of thermodonors (TDs) (doubly-charged
and shallow ones) under thermal treatments (TT) at 450 °C with the kinetics of
paramagnetic center accumulation in the samples obtained by the MS method. The
absence of correlation between these dependences has been shown. The dependences
χ(H) obtained both at 300 and 77 K that have orientation and paramagnetic component
determine neither of these two kinds of TD-centers as it was in the case of 450 °C TT for
p-Si(B) samples where the χ par component is determined by the concentration of deep
TDs (Е і
≥
0.2 еV). The χ(H) value in the n-Si(P) samples after TT at 450 °C is
determined, evidently, by intermediate non-stable complexes, as well as by those formed
during rapid cooling the samples.
Keywords: diamagnetism, paramagnetism, magnetic susceptibility, thermodonors,
thermal treatment.
| ||