|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 4. P. 389-392.
Changes in nanostructure and micro-plastic properties
of silicon crystals under action of magnetic fields
1T. Shevchenko Kyiv National University, Physical Department,
2 prosp. Akademika Glushkova, build. 1, 03680 Kyiv, Ukraine; e-mail: koplak_o@ukr.net
Abstract. Experimental data obtained in this work are indicative of the fact that magnetic
field stimulates processes of structural relaxation in silicon. Using the secondary-ion
mass-spectrometry method, we found that the concentration of alkali metals (K, Na, Ca)
in the subsurface layer is essentially (4 to 5 times) increased after magnetic impact. The
carbon concentration is increased, too, while the concentration of oxygen (dominant
impurity in silicon) is changed in various ways. Non-homogeneous distribution of
impurities results in non-uniformity of heights for nano-objects that are formed from
them, which leads to non-uniformity in micro-relief and causes a respective increase of
the roughness parameter. The changes in impurity composition of silicon crystals, which
are caused by the magnetic influence, correlate with changes in silicon micro-plastic
characteristics. In this work, we found a positive magneto-plastic effect. Most probable,
the reason for braking the dislocation motion in silicon crystals after magnetic treatment
is diffusion of impurities along dislocation lines, which is enhanced by magnetic field.
Coagulants of diffusing.
Keywords: silicon, magnetic field, nano-cluster.
| ||