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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 4. P. 413-417.
Controlling the photoluminescence spectra
of porous nc-Si–SiOx structures by vapor treatment
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine, e-mail: indutnyy@isp.kiev.ua
Abstract. The effect of HF and H 2 O 2 vapor treatment on the spectral composition and
intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiO x structures
have been studied using FTIR, electron-spin resonance (EPR) and PL measurements. As
a result of HF vapor treatment, considerable PL intensity growth and blueshift of PL
peak position are observed. It is suggested that the evolution of the PL spectra in HF
vapor-treated samples can be attributed to selective-etching-induced decrease in Si
nanoparticle dimensions and to passivation of Si dangling bonds (that are nonradiative
recombination trap states) by hydrogen and oxygen. Additional treatment in H 2 O 2 vapor
results in additional nc-Si surface oxidation and reduction of nc-Si size. The possibility to
control the PL characteristics (peak position and intensity) of the porous nc-Si–SiO x
structures in a wide range by above treatments is shown.
Keywords: nanocrystal, silicon oxide, photoluminescence, thin film.
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