Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 4. P. 436-438.
https://doi.org/10.15407/spqeo13.04.436

Temperature dependence of contact resistance of Au−Ti−Pd2Si−n+-Si ohmic contacts
A.E. Belyaev1, N.S. Boltovets2, R.V. Konakova1, Ya.Ya. Kudryk1, A.V. Sachenko1, V.N. Sheremet1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine Phone: (380-44) 525-61-82; fax: (380-44) 525-83-42; e-mail: konakova@isp.kiev.ua
2State Enterprise Research Institute “Orion”, 8 a Eugene Pottier St., Kyiv, 03057, Ukraine

Abstract. We investigated temperature dependence of contact resistance of an Au−Ti−Pd 2 Si ohmic contact to heavily doped n + -Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In this case, the limiting process is diffusion input of electrons to the metal shunts. The proposed mechanism of contact resistance formation seems to realize also in the case of wide-gap semiconductors with high concentration of surface states and dislocation density in the contact.

Keywords: wide-gap semiconductor, ohmic contact, contact resistance.

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