Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 4. P. 338-339.
DOI: https://doi.org/10.15407/spqeo15.04.338

Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates
V.P. Makhniy1, М.М. Slyotov1, I.V. Tkachenko2, А.М. Slyotov1

1Yu. Fedkovych Chernivtsi National University, 2, Kotsyubynsky str. 58012, Chernivtsi, Ukraine; e-mail: MSlyotov@mail.ru;
2Chernivtsi Trade and Economic Institute of Kyiv National University of Trade and Economics, 7, Central Square, 58002 Chernivtsi, Ukraine; e-mail: irina-tkachenko1711@rambler.ru

Abstract. . Using the isovalent substitution method, CdSe heterolayers of cubic modification were obtained for the first time on single-crystal CdTe substrates, and their basic physical properties were studied.

Keywords: isovalent substitution, heterolayers, cubic modification, physical properties.

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