Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 4. P. 358-359.
DOI: https://doi.org/10.15407/spqeo15.04.358

X-ray dosimetry of copper-doped CdGa2S4 single crystals
S.N. Mustafaeva1*, M.M. Asadov2, D.T. Guseinov1

1Institute of Physics, National Academy of Sciences of Azerbaijan, Az 1143 Baku, G. Javid ave. 33
2Institute of Chemical Problems, Azerbaijan National Academy of Sciences AZ 1143 Baku, G.Javid av., 29 *E-mail: solmust@gmail.com

Abstract. . Comparative analysis of the X-ray dosimetric characteristics of CdGa2S4 and CdGa2S4<Cu> single crystals demonstrates that after copper-doping the persistence of the crystal characteristics completely disappears. The current-dose characteristics tend to linearity (α = 1) at low dose rates of X-rays. At high dose rates, α tends to 0.5, which testifies to the mechanism of quadratic recombination of charge carriers generated by X-rays in CdGa2S4<Cu>.

Keywords: copper-doped CdGa2S4 single crystals, X-ray sensitivity, effective hardness of X-rays, current-dose characteristics, radiation dose, X-ray detector.

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