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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 4. P. 365-369.
A theoretical model for exciton binding energies in rectangular
and parabolic spherical finite quantum dots
Faculté des sciences. Département de Physique, Université Abdelmalek Essaadi,
BP 2121, Tétouan, Morocco
*E-mail: abtaqi@yahoo.fr
Abstract. . Using the variational method in real space and the effective-mass theory, we present quite an advanced semi-analytic approach susceptible for calculating the binding energy EB of Wannier excitons in semiconductor quantum dot structures with rectangular and parabolic shapes of the confining potential in the so-called strong-confinement regime. Illustration is given for CdS, ZnSe, CdSe, GaAs structures of crystallites for both rectangular and parabolic quantum dots, and it displays a very good agreement between the experimental and theoretical results reported in literature.
Keywords: exciton, binding energy, rectangular quantum dot, parabolic quantum dot.
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