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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 4. P. 382-385.
Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates
Ivan Franko Lviv National University, Department of Electronics,
50, Dragomanov str., 79005 Lviv, Ukraine
Phone: 38 (032) 239-46-23; e-mail: iolenych@gmail.com
Abstract. . Current-voltage characteristics, spectral dependences of photovoltage and short-circuit current of the structures based on porous silicon at adsorption of iodine molecules are presented. It is revealed widening the spectral range of photosensitivity in the samples in short-wavelength range as compared with that of single crystal silicon. Kinetics of the photovoltage response inherent to the porous silicon-silicon structures has been investigated. The results are explained in the frame of qualitative model that involves formation of p-n-transitions in these structures as a result of inversion of the conductivity type in porous silicon nanocrystals under the influence of adsorption of molecular iodine.
Keywords: porous silicon, iodine adsorption, photovoltage, photocurrent, spectral characteristics.
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