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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 4. P. 416-421.
Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods
1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
41, prospect Nauki, 03680 Kyiv, e-mail: stanetska_anna@ukr.net
Abstract. The process of cutting, mechanical and chemical treatment of the undoped and doped ZnSe crystal surface has been studied. The chemical interaction of zinc selenide surface with bromine emerging solutions of H2O2 – HBr and H2O2 – HBr – organic solvent has been studied. The surface states after chemical etching have been investigated using electron, metallographic and atomic force microscopy, and it was shown that the surface state is improved after chemical etching. Etchant selection to develop slow polishing compositions for chemical-mechanical polishing of investigated materials has been made. Efficient methods for washing samples solutions have been developed after different types of ZnSe surface treatment: cutting of the crystal, mechanical surface treatment, chemical removing the surface damaged layer. Keywords: zinc selenide, etchant, crystal, semiconductor, surface treatment, chemical polishing.
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