V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03680 Kyiv, Ukraine

Abstract. We propose a phenomenological model that explains the changes in the optical spectra of the structures wide gap semiconductor – oxide film, which takes place as a result of short-term microwave treatment. To explain the specific athermal microwave exposure, proposed was an integrated approach that is a combination of several processes that are described by various models. Interaction of processes caused by the resonant interaction of microwave radiation with the intrinsic oscillations of dislocations, which can lead to dislocation motion, has been considered. The length of dislocations, for which the condition of the resonant interaction is fulfilled, has been estimated. It has been shown that the combination of the considered processes can lead to appearance of additional centers of light absorption or scattering, which is manifested in the spectra of optical absorption and photoluminescence of the structures wide-gap semiconductor – oxide film.

Keywords: wide gap semiconductor, oxide film, athermal interaction, microwave radiation, dislocation.

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