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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 4. P. 464-467.
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine; Phone/fax: +38 (044) 525 5788. E-mail: vkost@isp.kiev.ua Abstract. This paper describes the results of comparative studies of illumination current-voltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of non-passivated and passivated front illuminated surface. Passivation was performed by silicon dioxide layer or ITO layer. It was found that ITO layer surface passivation with formation of ITO/silicon heterojunction, unlike silicon dioxide layer passivation, leads to a significant reduction of the effective surface recombination velocity. It significantly increases the value of the internal quantum efficiency in the wavelength range from 550 to 1050 nm and, as a result, significantly increases the value of short-circuit current of solar cells. Keywords: solar cell, internal quantum efficiency, external quantum efficiency, velocity of surface recombination, spectral dependence, isotype heterojunction.
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