Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 4. P. 328-333.
DOI: https://doi.org/10.15407/spqeo19.04.328

Direct synthesized graphene-like film on SiO2: Mechanical and optical properties
E.G. Bortchagovsky1, A.V. Vasin1, P.M. Lytvyn1, S.I. Tiagulskyi1, A.M. Slobodyan2, I.N. Verovsky1, V.V. Strelchuk1, Yu. Stubrov1 and A.N. Nazarov1,*

1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
2National Technical University of Ukraine “KPI”, Department of General Physics and Solid State Physics, Kyiv, Ukraine
*Corresponding author: phone/fax :+38 (044) 525 61 77; e-mail: nazarov@lab15.kiev.ua

Abstract. Exploiting CVD technique for carbon deposition from C2H2+H2+N2 mixture, a graphene-like film synthesized directly on SiO2 surface of SiO2-Si structure was obtained. The graphene-like film was grown under thin Ni layer that is easy exfoliated from graphene-SiO2-Si structure. Surface of the film was sufficiently smooth and reveals no winkles and holes; it has a good homogeneity and perfect adhesion to SiO2 layer. Studying the micro-Raman spectra showed a graphene-like structure of the film; using atomic force microscopic technique, the thickness of film was determined (0.6 nm). Using spectroscopic ellipsometry and simple Cauchy model enabled us to estimate optical parameters of this graphene-like film.

Keywords: directly grown graphene on SiO2, chemical vapor deposition, micro-Raman, AFM, spectroscopic ellipsometry.

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