Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N4. P. 366-370.
DOI: https://doi.org/10.15407/spqeo19.04.366

References

1.    R.V. Konakova, P. Kordosh, Yu.A. Thorik, V.I. Fainberg, F. Shtofanik, Prediction of Reliability of Semiconductor Avalanche Diodes / Ed. by Yu.A. Thorik. Naukova dumka, Kiev, 1986 (in Russian).
 
2.    A.E. Belyaev, V.V. Basanets, N.S. Boltovets et al., Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes . Semiconductors, 45(2), p. 253-259 (2011).
https://doi.org/10.1134/S1063782611020047
 
3.    A.I. Lebedev, Physics of Semiconductor Devices. Fizmatlit Publ. House, 2008 (in Russian).
 
4.    R.K. Kupka, W.A. Anderson, Minimal ohmic contact resistance limits to n-type semiconductors . J. Appl. Phys. 69(6), p. 3623-3632 (1991).
https://doi.org/10.1063/1.348509
 
5.    R.H. Cox, H. Strack, Ohmic contacts for GaAs devices . Solid State Electron. 10(12), p. 1213-1218 (1967).
https://doi.org/10.1016/0038-1101(67)90063-9
 
6.    R.D. Brooks, H.G. Mathes, Spreading resistance between contact potential surface . Bell System Tech. J. 50, p. 775-784 (1971).
https://doi.org/10.1002/j.1538-7305.1971.tb01882.x
 
7.    Ya.Ya. Kudryk, Specific resistance of ohmic contacts in the metal-semiconductor structures . Peterburgskii zhurnal elektroniki, N1, p. 25-40, (2010), in Russian.
 
8.    A.N. Tikhonov, A.A. Samarskii, Equations of Mathematical Physics. Fifth edition. Nauka, Moscow, 1977 (in Russian).
 
9.    David Potter, Computational Physics. John Wiley and Sons, 1973.