Semiconductor
Physics, Quantum Electronics & Optoelectronics. 2016. V. 19,
N4. P. 391-394. 2. A.N. Georgobiani, M.B. Kotlyarevskiy, Problems of creation injection light diodes on basis of AIIBVI widegap semiconductor compounds . Izv. AN USSR. Ser. Fizicheskaya, 49(10), p. 1916-1922 (1985), in Russian. 3. O.V. Bogdankevich, Semiconductor lasers with elector beam pumping . Kvantovaya elektronika, 21(12), p. 1113-1136 (1994), in Russian. 4. K.V. Beregnoi, A.S. Nasibov, P.V. Shapkin et al., Radiation of zinc selenide plates excited by pulsed electric field . Kvantovaya elektronika, 38(9), p. 829-832 (2008), in Russian. 5. N.A. Kulchitskiy, A.V. Naumov, Modern optoelectronic devices based on zinc selenide . Nanoinzheneriya, 11, p. 19-27 (2014), in Russian. 6. M.M. Berezovskiy, V.P. Makhniy, V.V. Melnik, Influence of Li, Cd, In and As impurities on optoelectronic properties of ZnSe . Neorganicheskie materialy, 33(2), p. 181-183 (1997), in Russian. 7. V.I. Gryvul, V.P. Makhniy, M.M. Slyotov, The origin of edge luminescence in diffusion ZnSe:Sn layers . Semiconductors, 41(7), p. 784-785 (2007). https://doi.org/10.1134/S1063782607070020 8. M. M. Sletov, Edge luminescence from zinc selenide doped with isovalent magnesium impurity . Technical Physics Letters, 27(1), p. 63-64 (2001). https://doi.org/10.1134/1.1345168 9. A.N. Krasnov, Yu.F. Vaksman, Yu.N. Purtov, Hole conductivity in monocrystals with an metalloid excess . Pis'ma v zhurnal tekhnicheskoi fiziki, 18(12), p. 1-5 (1992), in Russian. 10. V.P. Makhniy, O.V. Kinzerska, I.M Senko, O.M. Slyotov, The properties of edge luminescence band of zinc selenide with ytterbium impurity . IX Intern. Conf. on Topical Problems of Semiconductor Physics, May 16-20, 2016, Truskavets, Ukraine, p. 68. 11. Patent 107292 Ukraine, CI (2016.01) C30B 25/00, C30B 31/00. V.P. Makhniy, O.V. Kinzerska, I.M. Senko, Methods of doping ZnSeTe crystals with rare-earth elements. Appl. date 24.12.2015; published 25.05.2016, Bul. N 10. 12. D.D. Nedeoglo, A.V. Simashkevich, Electrical and Luminescent Properties of Zinc Selenide. Chisinau, Shtiintsa, 1984. 13. Y.F. Vaksman, Luminescence of zinc selenide monocrystals and emitting structure on their basis . 14. A.T. Gorelenok, A.V. Kamanin, N.M. Shmidt, Rare-earth elements in the technology of III–V compounds and devices based on these compounds . Semiconductors, 37(8), p. 894-914 (2003). https://doi.org/10.1134/1.1601656 15. V.P. Gribkovskiy, Absorbtion and Light Emitting Theories in Semiconductors. Minsk, Nauka i tekhnika, 1975 (in Russian). 16. E. Koh, D.W. Langer, Luminescence of ZnSe near the band edge under strong laser light excitation . J. Lumin. 1-2, p. 514-527 (1970). https://doi.org/10.1016/0022-2313(70)90064-5 17. I. Radevici, K. Sushkevich, V. Sirkeli, H. Huhtinen, D. Nedeoglo, P. Paturi, Luminescent properties of the ZnSe:Yb crystals in the visible spectral range . J. Lumin. 143, p. 275-279 (2013). https://doi.org/10.1016/j.jlumin.2013.05.010 |