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Semiconductor
Physics, Quantum Electronics and Optoelectronics, 21 (4), P. 392-396 (2018). References
1. Mil'vidskii M.G., Chaldyshev V.V. Nanometer-size atomic clusters in semiconductors – a new approach to tailoring material properties Semiconductors. 1998. 32, Issue 5. P. 457–465.
2. Borisenko V.E., Vorob'ieva A.I., Daniliuk A.L., Utkina E.A. Nanoelectronics: Theory and Practice. Handbook. 3-rd ed. Moscow: Binom. Laboratoriya znanii, 2013 (in Russian).
3. Poole Ch.P., Jr., Owens F.J. Introduction to Nanotechnology. Wiley-Interscience, 2003.
4. Milnes A.G. Deep Impurities in Semiconductors. New York, Wiley, 1973.
5. Boltaks B.I. Diffusion and Point Defects in Semiconductors. Leningrad, Nauka, 1972 (in Russian).
6. Abdurakhmanov K.P., Kulikov G.S., Lebedev A.A., Utamuradova Sh.B., Yusupova Sh.A. Investigation of the behavior of manganese and nickel impurities in diffusion doping of silicon. Fizika tekhnika poluprovodnikov. 1991. 25, Issue 6. P. 1075–1078 (in Russian).
7. Abdurakhmanov B.A., Bakhadirkhanov M.K., Saitov E.B. et al. Formation of clusters of impurity atoms of nickel in silicon and controlling their parameters. Nanoscience and Nanotechnology. 2014. 4, No. 2. P. 29–32. doi:10.5923/j.nn.20140402.01.
8. Bakhadyrkhanov M.K., Iliev Kh.M., Ayupov K.S., Abdurakhmonov B.A., Krivenko P.Yu., Kholmukhamedov R.L. Self-organization of nickel atoms in silicon. Inorganic Materials. 2011. 47, No 9. P. 962–964. https://doi.org/10.1134/S0020168511090020.
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