@article{spqeo23n4_339_345,
  title = {Features of current transport in Al–Al2O3–p-CdTe–Mo structure},
  author = {A.K. Uteniyazov and A.Yu. Leyderman and R.A. Ayukhanov and E.S. Esenbaeva and M.V. Gafurova},
  journal = {Semiconductor Physics, Quantum Electronics & Optoelectronics},
  volume = {23},
  number = {4},
  pages = {339--345},
  year = {2020},
  doi = {10.15407/spqeo23.04.339},
  url = {https://doi.org/10.15407/spqeo23.04.339},
  abstract = {The results of studies of the current-voltage characteristics of the Al–Al2O3–p-CdTe–Mo structure in the forward direction of the current in the dark and under light illumination have been presented. These characteristics have four sections of the power-law dependence of the current on the voltage in the form J ~ Vα. It has been shown that the Al–Al2O3–p-CdTe–Mo structure can be considered as a n+-p diode structure with a long base, in which the current transport processes are described by the drift model of ohmic relaxation under conditions of non-equilibrium carriers recombination occurring through a pair two-level recombination complex.},
  keywords = {sinjection, pair two-level recombination complex, rapid current increase.}
}