TY  - JOUR
T1  - Features of current transport in Al–Al2O3–p-CdTe–Mo structure
AU  - A.K. Uteniyazov
AU  - A.Yu. Leyderman
AU  - R.A. Ayukhanov
AU  - E.S. Esenbaeva
AU  - M.V. Gafurova
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 23
IS  - 4
SP  - 339
EP  - 345
PY  - 2020
DO  - 10.15407/spqeo23.04.339
UR  - https://doi.org/10.15407/spqeo23.04.339
AB  - The results of studies of the current-voltage characteristics of the Al–Al2O3–p-CdTe–Mo structure in the forward direction of the current in the dark and under light illumination have been presented. These characteristics have four sections of the power-law dependence of the current on the voltage in the form J ~ Vα. It has been shown that the Al–Al2O3–p-CdTe–Mo structure can be considered as a n+-p diode structure with a long base, in which the current transport processes are described by the drift model of ohmic relaxation under conditions of non-equilibrium carriers recombination occurring through a pair two-level recombination complex.
KW  - sinjection
KW  - pair two-level recombination complex
KW  - rapid current increase.
ER  -