Semiconductor Physics, Quantum Electronics and Optoelectronics, 24 (4) P. 466-471 (2021).


1. Rogalski A. Infrared and Terahertz Detectors. Third Edition. CRC Press. 2019.

2. Marshall A.R.J., Vines P., Ker P.J., David J.P.R., Tan C.H. Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K. IEEE J. Quant. Electron. 2011. 47, No 6. P. 858-864.

3. Persson K.-M., Malm B.G., Wernersson L.-E. Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors. Appl. Phys. Lett. 2013. 103. P. 033508.

4. Ker P., David J.P.R., Tan C.H. Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes. Opt. Exp. 2012. 20, No 28. P. 29568-29576.

5. Ng J.S., Zhou X.X., Auckloo A. et al. High sensitivity InAs photodiodes for mid-infrared detection. Proc. SPIE. 2016. 9988. P. 99880K.

6. 1/f noise in InAs/InAsSb superlattice photo-conductors. IEEE Trans. Electron. Dev. 2020. 67, No 8. P. 3205-3210.

7. Tetyorkin V., Sukach A. and Tkachuk A. InAs Infrared Photodiodes. In: Advances in Photodiodes. Ed. Gian-Franco Dalla Betta. InTech Open Acess Publ., Vienna, 2011. P. 427-446.

8. Sharma B.L., Purohit R.K. Semiconductor Heterojunctions. Pergamon Press, 1974.

9. Sukach A.V., Teterkin V.V. Ultrasonic treatment induced modification of the electrical properties of InAs p-n junctions. Techn. Phys. Lett. 2009. 35, No 6. P. 514-517.

10. Kleinpenning T.G.M. 1/f noise in p-n junction diodes. J. Vac. Sci. Technol. 1985, A3, No 1. P. 176-182.

11. Hooge F.N., Kleinpenning T.G.M., Vandamme L.K.J. Experimental studies on 1/f noise. Repts Prog. Phys. 1981. 4, No 5. P. 479-532.

12. Lukyanchikova N.B., Solganik B.D., Kosogov O.V. Effect of illumination on noise and some other characteristics of p-n junctions in InSb. Solid-State Electron. 1973. 16, No 12. P. 1473-1480.

13. Chernyakov A.E., Levinshtein M.E., Shabunina E.I., Shmidt N.M. Low-frequency noise in diagnostics of power blue InGaN/GaN LEDs. J. Cryst. Growth. 2014. 401. P. 302-304.

14. Zhukov N.D., Kabanov V.F., Mihaylov A.I. et al. Peculiarities of the properties of III-V semiconductors in a multigrain structure. Semiconductors. 2018. 52, No 1. P. 78-83.

15. Riben A.R., Feucht D.L. Electrical transport in nGe-pGaAs heterojunctions. Int. J. Electron. 1966. 20, No 6. P. 583-599.

16. Perlin P., Osinski M., Eliseev P.G. et al. Low-temperature study of current and electro-luminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes. Appl. Phys. Lett. 1996. 69, No 12. P. 1680-1682.

17. Lukyanchikova N.B. Noise Research in Semiconductor Physics. Gordon & Breach Science Publ., London, 1997.