Semiconductor Physics, Quantum Electronics & Optoelectronics, 24 (4), P. 472-477 (2021).

Exploring the characteristics of SnO2 nanoparticles doped organic blend for low cost nanoelectronics applications
A.J.K. Algidsawi1, A. Hashim2, A. Hadi3, M.A. Habeeb2

1Department of Soil and Water, College of Agriculture, AL-Qasim Green University, Babylon, Iraq
2Department of Physics, College of Education of Pure Sciences, University of Babylon, Babylon, Iraq
3University of Babylon, College of Materials Engineering, Department of Ceramic and Building Materials, Iraq

Abstract. The PVA/PVP/SnO2 nanostructure films were fabricated using the casting technique. The structure, dielectric and optical characteristics of PVA/PVP/SnO2 nanostructures were studied for pressure sensors. Results of studying the dielectric characteristics showed that the dielectric constant, dielectric losses and electrical conductivity of blend are enhanced with the rise of SnO2 nanoparticles (NPs) content. The dielectric constant and dielectric losses are reduced, while the conductivity is risen with the increase in frequency. The dielectric constant increases from 2.53 to 7.41, and dielectric losses rise from 0.5 to 2, while the conductivity increases from 2.82·10–11 S/cm up to 1.11·10–10 S/cm. The results of measuring the optical characteristics have indicated that the absorbance rises with increasing the SnO2 NPs content. The energy gap of blend has been reduced from 4.9 down to 4.65 eV with the rise in SnO2 NPs content. The optical constants have been improved with the rise in SnO2 NPs content. Results of studying the pressure sensors have shown that their capacitance grows with the pressure increase.

Keywords:SnO2, pressure sensors, capacitance, energy gap, nanocomposites.

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