TY  - JOUR
AU  - A.M. Goriachko
AU  - M.V. Strikha
TI  - Nanostructured SiC as a promising material for the cold electron emitters
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 24
IS  - 4
SP  - 355
EP  - 361
PY  - 2021
DO  - 10.15407/spqeo24.04.355
UR  - https://doi.org/10.15407/spqeo24.04.355
AB  - In this paper, the novel cold electron emitters based on nanostructured SiC layers covering the Si(001) substrate have been proposed. Their main advantage is an extremely simple and cost-effective manufacturing process based on the standard microelectronics-grade silicon wafers with no ultra-high vacuum required and no complicated chemical deposition processes or toxic chemicals involved. It integrates within a single technological step both the SiC growth and nanostructuring the surface in the form of nanosized protrusions, which is extremely beneficial for cathode applications. A simple mathematical model predicts field emission current densities and turn-on electric fields, which would allow practical device applications. According to our estimations, emission currents in the milli-Amp range can be harvested from one square centimeter of the cathode surface with electric field close to 107 V/m. So, the nanostructured SiC can be the promising material for the cold electron emitters.
KW  - cold electron emitters
KW  - nanostructured SiC layers
KW  - current density.
ER  -