@article{Kladko2021362,
  title = {Phase transition in vanadium oxide films formed by multistep deposition},
  author = {V.P. Kladko and V.P. Melnik and О.I. Liubchenko and B.M. Romanyuk and О.Yo. Gudymenko and Т.M. Sabov and О.V. Dubikovskyi and Z.V. Maksimenko and О.V. Kosulya and O.A. Kulbachynskyi and P.M. Lytvyn and О.O. Efremov},
  journal = {Semiconductor Physics, Quantum Electronics & Optoelectronics},
  year = {2021},
  volume = {24},
  number = {4},
  pages = {362-371},
  doi = {10.15407/spqeo24.04.362},
  keywords = {vanadium oxide films, phase transition, low-temperature annealing, theoretical modeling.},
  abstract = {VOx films deposited using the multistep method have been investigated. These films were prepared by repeating the two-stage method of low-temperature deposition and low-temperature annealing. The structure and characteristics of VOx thin films have been studied. Taking into account the obtained results, theoretical modeling of the structure was performed and the parameters of the metal-insulator transition have been calculated.}
}