TY  - JOUR
AU  - V.P. Kladko
AU  - V.P. Melnik
AU  - О.I. Liubchenko
AU  - B.M. Romanyuk
AU  - О.Yo. Gudymenko
AU  - Т.M. Sabov
AU  - О.V. Dubikovskyi
AU  - Z.V. Maksimenko
AU  - О.V. Kosulya
AU  - O.A. Kulbachynskyi
AU  - P.M. Lytvyn
AU  - О.O. Efremov
TI  - Phase transition in vanadium oxide films formed by multistep deposition
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 24
IS  - 4
SP  - 362
EP  - 371
PY  - 2021
DO  - 10.15407/spqeo24.04.362
UR  - https://doi.org/10.15407/spqeo24.04.362
AB  - VOx films deposited using the multistep method have been investigated. These films were prepared by repeating the two-stage method of low-temperature deposition and low-temperature annealing. The structure and characteristics of VOx thin films have been studied. Taking into account the obtained results, theoretical modeling of the structure was performed and the parameters of the metal-insulator transition have been calculated.
KW  - vanadium oxide films
KW  - phase transition
KW  - low-temperature annealing
KW  - theoretical modeling.
ER  -