TY  - JOUR
AU  - B.N. Shashikala
AU  - B.S. Nagabhushana
TI  - Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 24
IS  - 4
SP  - 399
EP  - 406
PY  - 2021
DO  - 10.15407/spqeo24.04.399
UR  - https://doi.org/10.15407/spqeo24.04.399
AB  - This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO2) on the leakage current of Ni/Au/n-GaN Schottky diode was investigated. This suggests that the TiO2 passivated structure reduces the reverse leakage current of Ni/Au/n-GaN Schottky diode. Also, the reverse leakage current of Ni/Au/n-GaN Schottky diodes decreases as the field plate length increases. The temperature-dependent electrical characteristics of TiO2 passivated field plate Ni/Au/n-GaN Schottky diodes have shown an increase of barrier height within the temperature range 300…475 K.
KW  - field plate
KW  - GaN
KW  - leakage current
KW  - Schottky diode
KW  - TiO2.
ER  -