TY  - JOUR
AU  - V.L. Borblik
TI  - Analytic theory for current-voltage characteristic of a nanowire radial p-i-n diode
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 24
IS  - 4
SP  - 419
EP  - 424
PY  - 2021
DO  - 10.15407/spqeo24.04.419
UR  - https://doi.org/10.15407/spqeo24.04.419
AB  - In this article, process of current flow in a nanowire radial p-i-n diode has been considered in detail. It has been shown that cylindrical geometry of the structure gives rise to specific asymmetry of the concentration distribution for current carriers injected to the i-layer, which is opposite to asymmetry that is due to inequality of carriers’ mobilities. This specific asymmetry rises with bringing the i-layer nearer to the nanowire center. Together with that, decrease of the current density in a “long” p-i-n diode and its increase in a “short” p-i-n diode take place (at given forward voltage). And variation of radial thickness of the i-layer demonstrates maximums in the current density at the thickness close to the bipolar diffusion length.
KW  - core-shell nanowire
KW  - radial p-i-n diode
KW  - concentration distribution
KW  - current-voltage characteristic.
ER  -