TY  - JOUR
AU  - A.J.K. Algidsawi
AU  - A. Hashim
AU  - A. Hadi
AU  - M.A. Habeeb
TI  - Exploring the characteristics of SnO2 nanoparticles doped organic blend for low cost nanoelectronics applications
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 24
IS  - 4
SP  - 472
EP  - 477
PY  - 2021
DO  - 10.15407/spqeo24.04.472
UR  - https://doi.org/10.15407/spqeo24.04.472
AB  - The PVA/PVP/SnO2 nanostructure films were fabricated using the casting technique. The structure, dielectric and optical characteristics of PVA/PVP/SnO2 nanostructures were studied for pressure sensors. Results of studying the dielectric characteristics showed that the dielectric constant, dielectric losses and electrical conductivity of blend are enhanced with the rise of SnO2 nanoparticles (NPs) content. The dielectric constant and dielectric losses are reduced, while the conductivity is risen with the increase in frequency. The dielectric constant increases from 2.53 to 7.41, and dielectric losses rise from 0.5 to 2, while the conductivity increases from 2.82·10–11 S/cm up to 1.11·10–10 S/cm. The results of measuring the optical characteristics have indicated that the absorbance rises with increasing the SnO2 NPs content. The energy gap of blend has been reduced from 4.9 down to 4.65 eV with the rise in SnO2 NPs content. The optical constants have been improved with the rise in SnO2 NPs content. Results of studying the pressure sensors have shown that their capacitance grows with the pressure increase.
KW  - SnO2
KW  - pressure sensors
KW  - capacitance
KW  - energy gap
KW  - nanocomposites.
ER  -