@article{Okhrimenko2022355Redistribution,
  author = {O.B. Okhrimenko and Yu.Yu. Bacherikov and O.F. Kolomys and V.V. Strelchuk and R.V. Konakova},
  title = {Redistribution of centers responsible for radiative recombination in SiC/por-SiC and SiC/por-SiC/Er2O3 structures under nonthermal action of microwave radiation},
  journal = {Semiconductor Physics, Quantum Electronics \& Optoelectronics},
  year = {2022},
  volume = {25},
  number = {4},
  pages = {355--361},
  doi = {10.15407/spqeo25.04.355},
  url = {https://doi.org/10.15407/spqeo25.04.355},
  abstract = {In this work, the authors have considered the effect of short-term nonthermal action of microwave radiation on the photoluminescent characteristics of SiC/por-SiC/Er2O3 and SiC/por-SiC structures. The analysis of photoluminescence spectra of these structures, which are excited by radiation with an energy lower than the band gap in the 4H-SiC crystalline substrate, has shown that short-term action of microwave radiation leads to redistribution of radiative recombination centers, which is caused by surface states in the por-SiC layer.},
  keywords = {Nonthermal microwave action, buffer porous layer, photoluminescence, Raman scattering, silicon carbide.}
}